Four Point Probe Tip Specifications Applications Chart
The following reference guide (developed by
Prometrix for the OmniMap system) suggests the best four point probe tip
specifications for a variety of silicon wafer types. We offer the service of testing wafers/materials to determine the optimum tips specifications. Please contact Bridge Technology for further information.
TC=tungsten carbide tip material. Osmium alloy tips are also available.
|
| PROBE TYPE
| TIP RADIUS |
SPRING LOAD |
MATERIAL |
SPACING |
APPLICATION |
A
F |
1.6 mils
1.6 mils |
100 grams
100 grams |
TC
TC |
40 mils
25 mils |
For measuring metals |
B
G |
4.0 mils
4.0 mils |
100 grams
100 grams |
TC
TC |
40 mils
25 mils |
General purpose head for
implantation, doped poly,
epitaxy, diffusion. |
C
H |
8.0 mils
8.0 mils |
100 grams
100 grams |
TC
TC |
40 mils
25 mils |
For high impedance
surfaces such as low
implant doses and shallow
junctions. |
| D |
20 mils |
100 grams |
TC |
40 mils |
For very difficult implant
and high impedance surfaces
beyond the 8.0 mil |
| E |
1.6 mils |
200 grams |
TC |
62.5 mils |
For substrate measurements |
Click here for information regarding replacement four point probe heads
for Prometrix and or KLA/Tencor resistivity wafer mapping systems.
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